Nanoscale memory repair
Yield and reliability of memories have degraded with device and voltage scaling in the nano-scale era, due to ever-increasing hard/soft errors and device parameter variations. As a result, repair techniques have been indispensable for nano-scale memories. Without these techniques, even modern MPUs/...
Tallennettuna:
| Päätekijät: | , |
|---|---|
| Aineistotyyppi: | Livre numérique |
| Kieli: | Anglais |
| Julkaistu: |
New York, NY :
Springer New York
2011.
Cham : Springer Nature |
| Sarja: | Integrated Circuits and Systems
|
| Linkit: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Huomautus: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Nanoscale Memory Repair, Texte imprimé, 9781441979575 • Nanoscale Memory Repair, Texte imprimé, 9781461427940 • Nanoscale Memory Repair, Texte imprimé, 9781441979599 |
Sisällysluettelo:
- An Introduction to Repair Techniques: Basics of Redundancy
- Basics of Error Checking and Correction
- Comparison between Redundancy and ECC
- Repairs of Logic Circuits
- Redundancy: Models of Fault Distribution
- Yield Improvement through Redundancy
- Replacement Schemes
- Intra-Subarray Replacement
- Inter-Subarray Replacement
- Subarray Replacement
- Devices for Storing Addresses
- Testing for Redundancy
- Error Checking and Correction: Linear Algebra and Linear Codes
- Galois Field
- Error-Correcting Codes
- Coding and Decoding Circuits
- Theoretical Reduction in Soft-Error and Hard-Error Rates
- Application of ECC
- Testing for ECC
- Synergistic Effect of Redundancy and ECC: Repair of Bit Faults using Synergistic Effect
- Application of Synergistic Effect.