Semiconductor Power Devices : Physics, Characteristics, Reliability
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles o...
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| Auteurs principaux: | , , , |
|---|---|
| Format: | Livre numérique |
| Langue: | Anglais |
| Publié: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Édition: | 1st ed. 2011. |
| Sujets: | |
| Accès en ligne: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Note: |
L'impression du document génère 527 p. Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Semiconductor Power Devices, Physics, Characteristics, Reliability, by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker., Heidelberg, Dordrecht, London, New York, Springer-Verlag Berlin Heidelberg, 2011, 1 vol. (XII-536 p.), 978-3-642-11124-2 |
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| 100 | 1 | |a Lutz, Josef. | |
| 245 | 1 | 0 | |a Semiconductor Power Devices : |b Physics, Characteristics, Reliability |c by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. |
| 250 | |a 1st ed. 2011. | ||
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 500 | |a L'impression du document génère 527 p. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 504 | |a Notes bibliogr. Index | ||
| 505 | 1 | |a Power Semiconductor Devices Key Components for Efficient Electrical Energy Conversion Systems Semiconductor Properties pn - Junctions Short introduction to power device technology pin-Diodes Schottky Diodes Bipolar Transistors Thyristors MOS Transistors IGBTs Packaging and Reliability of Power Devices Destructive Mechanisms in Power Devices Power Device Induced Oscillations and Electromagnetic Disturbances Power Electronic Systems Appendix Index | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. This book concludes with modern power electronic system integration techniques and trends. | ||
| 650 | |a Semiconducteurs de puissance | ||
| 650 | |a Transistors MOSFET | ||
| 650 | |a Thyristors | ||
| 700 | 1 | |a Schlangenotto, Heinrich. |4 aut | |
| 700 | 1 | |a Scheuermann, Uwe. |4 aut | |
| 700 | 1 | |a De Doncker, Rik. |4 aut | |
| 776 | 0 | |0 175702632 |t Semiconductor Power Devices |o Physics, Characteristics, Reliability |f by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker. |c Heidelberg, Dordrecht, London, New York |n Springer-Verlag Berlin Heidelberg |d 2011 |p 1 vol. (XII-536 p.) |z 978-3-642-11124-2 | |
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