Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A...
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| Glavni autor: | |
|---|---|
| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
2011.
Cham : Springer Nature |
| Serija: | Engineering Materials
|
| Online pristup: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Bilješka: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642163036 • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642266881 • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642163050 |
Sadržaj:
- Introduction
- The MOS Structure
- The MOS Oxide and Its Defects
- Review of Transport Mechanism in Thin Oxides of MOS Devices
- Experimental Techniques
- Theoretical Approaches of Mobile Ions Density Distribution Determination
- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide.