Transport in Metal-Oxide-Semiconductor Structures : Mobile Ions Effects on the Oxide Properties
This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
2011.
Cham : Springer Nature |
| Schriftenreihe: | Engineering Materials
|
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642163036 • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642266881 • Transport in Metal-Oxide-Semiconductor Structures, Texte imprimé, 9783642163050 |
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| 008 | 110208s2011 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN149906129 | ||
| 020 | |a 9783642163043 | ||
| 041 | 0 | |a eng | |
| 082 | |a 620.11295 | ||
| 082 | |a 620.11297 | ||
| 100 | 1 | |a Bentarzi, Hamid. | |
| 245 | 1 | 0 | |a Transport in Metal-Oxide-Semiconductor Structures : |b Mobile Ions Effects on the Oxide Properties |c by Hamid Bentarzi. |
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
| 260 | |a Cham : |b Springer Nature, |c 2011. | ||
| 490 | 0 | |a Engineering Materials |x 1868-1212 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Introduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures. | ||
| 776 | 0 | |t Transport in Metal-Oxide-Semiconductor Structures |b Texte imprimé |z 9783642163036 | |
| 776 | 0 | |t Transport in Metal-Oxide-Semiconductor Structures |b Texte imprimé |z 9783642266881 | |
| 776 | 0 | |t Transport in Metal-Oxide-Semiconductor Structures |b Texte imprimé |z 9783642163050 | |
| 856 | 4 | |q PDF |u https://doi.org/10.1007/978-3-642-16304-3 |z Accès sur la plateforme de l'éditeur | |
| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-C890JVDC-X |z Accès sur la plateforme Istex | |
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| 856 | 4 | |5 180339901:753980940 |u https://ezproxy.insa-cvl.fr/login?qurl=https://doi.org/10.1007/978-3-642-16304-3 |z Accès INSA CVL | |
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