Silicon Quantum Integrated Circuits : Silicon-Germanium Heterostructure Devices: Basics and Realisations
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...
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| Главные авторы: | , |
|---|---|
| Формат: | Livre numérique |
| Язык: | Anglais |
| Опубликовано: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Редактирование: | 1st ed. 2005. |
| Серии: | NanoScience and Technology
|
| Online-ссылка: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Примечание: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Silicon quantum integrated circuits, silicon-germanium heterostructure devices, basics and realisations, E. Kasper, D.J. Paul, 2005, Berlin, Springer, 1 vol. (XII-360 p.), Nanoscience and technology, 3-540-22050-X • Silicon Quantum Integrated Circuits, Texte imprimé, 9783540801894 • Silicon Quantum Integrated Circuits, Texte imprimé, 9783642060380 • Silicon quantum integrated circuits, silicon-germanium heterostructure devices, basics and realisations, E. Kasper, D.J. Paul, 2005, Berlin, Springer, 1 vol. (XII-360 p.), Nanoscience and technology, 3-540-22050-X |