Silicon Quantum Integrated Circuits : Silicon-Germanium Heterostructure Devices: Basics and Realisations
Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mi...
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| Main Authors: | , |
|---|---|
| Format: | Livre numérique |
| Language: | Anglais |
| Published: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
[20..].
Cham : Springer Nature |
| Edition: | 1st ed. 2005. |
| Series: | NanoScience and Technology
|
| Online Access: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Note: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Silicon quantum integrated circuits, silicon-germanium heterostructure devices, basics and realisations, E. Kasper, D.J. Paul, 2005, Berlin, Springer, 1 vol. (XII-360 p.), Nanoscience and technology, 3-540-22050-X • Silicon Quantum Integrated Circuits, Texte imprimé, 9783540801894 • Silicon Quantum Integrated Circuits, Texte imprimé, 9783642060380 • Silicon quantum integrated circuits, silicon-germanium heterostructure devices, basics and realisations, E. Kasper, D.J. Paul, 2005, Berlin, Springer, 1 vol. (XII-360 p.), Nanoscience and technology, 3-540-22050-X |
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| 100 | 1 | |a Kasper, Erich. | |
| 245 | 1 | 0 | |a Silicon Quantum Integrated Circuits : |b Silicon-Germanium Heterostructure Devices: Basics and Realisations |c by Erich Kasper, D.J. Paul. |
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| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg. | ||
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| 490 | 0 | |a NanoScience and Technology |x 2197-7127 | |
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| 505 | 1 | |a Material Science Resumé of Semiconductor Physics Realisation of Potential Barriers Electronic Device Principles Heterostructure Bipolar Transistors - HBTs Hetero Field Effect Transistors (HFETs) Tunneling Phenomena Optoelectronics Integration Outlook | |
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| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Quantum size effects are becoming increasingly important in microelectronics as the dimensions of the structures shrinks laterally towards 100 nm and vertically towards 10 nm. Advanced device concepts will exploit these effects for integrated circuits with novel or improved properties. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room temperature operation. The basic physical principles, materials, technological aspects and fundamental device operation are discussed in an interdisciplinary manner. It is shown that silicon-germanium (SiGe) heterostructure devices will play a key role in realizing silicon-based quantum electronics | ||
| 700 | 1 | |a Paul, Douglas J., |d 19..- |4 aut | |
| 776 | 0 | |0 095250182 |t Silicon quantum integrated circuits |o silicon-germanium heterostructure devices |o basics and realisations |f E. Kasper, D.J. Paul |d 2005 |c Berlin |n Springer |p 1 vol. (XII-360 p.) |s Nanoscience and technology |z 3-540-22050-X | |
| 776 | 0 | |t Silicon Quantum Integrated Circuits |b Texte imprimé |z 9783540801894 | |
| 776 | 0 | |t Silicon Quantum Integrated Circuits |b Texte imprimé |z 9783642060380 | |
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