Materials for information technology : devices, interconnects and packaging
The fast-developing information technology industry is driving a need for new materials in order to facilitate the development of more reliable microelectronic products. Materials for Information Technology is an up-to-date overview of current developments and R&D activities in the field of mate...
保存先:
| その他の著者: | , , |
|---|---|
| フォーマット: | Livre numérique |
| 言語: | Anglais |
| 出版事項: |
London :
Springer London
[20..].
Cham : Springer Nature |
| 版: | 1st ed. 2005. |
| シリーズ: | Engineering Materials and Processes
|
| オンライン･アクセス: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| 注記: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Materials for information technology, devices, interconnects and packaging, Ehrenfried Zschech, Caroline Whelan and Thomas Mikolajick (eds.), London, Springer, 2005, 1 vol. (xix-508 p.), Engineering materials and processes, 1-85233-941-1 |
目次:
- Recent Advances in Thin-film Deposition Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS LEPECVD A Production Technique for SiGe MOSFETs and MODFETs Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices Atomic-layer Deposited Barrier and Seed Layers for Interconnects Copper CVD for Conformal Ultrathin-film Deposition Pushing PVD to the Limits Recent Advances Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition Selective Airgaps: Towards a Scalable Low-k Solution Silicides Recent Advances and Prospects TEM Characterization of Strained Silicon Material Aspects of Non-Volatile Memories An Introduction to Nonvolatile Memory Technology Floating-dot Memory Transistors on SOI Substrate Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures Scaling of Ferroelectric-based Memory Concepts Device Concepts with Magnetic Tunnel Junctions Phase-change Memories Amorphous-to-fcc Transition in GeSbTe Alloys Organic Nonvolatile Memories Materials for Interconnects Interconnect Technology Today, Recent Advances and a Look into the Future Dielectric and Scaling Effects on Electromigration for Cu Interconnects Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction Stress Modeling for Copper Interconnect Structures Conductivity Enhancement in Metallization Structures of Regular Grains Advanced Barriers for Copper Interconnects Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion Carbon Nanotube Via Technologies for Future LSI Interconnects Nickel Nanowires Obtained by Template Synthesis Materials for Assembly/Packaging The Importance of Polymers in Wafer-Level Packaging Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge The Role of Au/Sn Solder in Packaging Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding Advanced Materials Characterization Challenges to Advanced Materials Characterization for ULSI Applications Advanced Material Characterization by TOFSIMS in Microelectronic Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces Materials Characterization by Ellipsometry Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures