High-linearity CMOS RF front-end circuits
The rapidly growing wireless communication industry is increasingly demanding CMOS RF ICs due to their lower costs and higher integration levels. The RF front-end of such wireless systems often needs to handle widely disparate signal levels: small desired signals and large interferers. Therefore, it...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Livre numérique |
| Sprache: | Anglais |
| Veröffentlicht: |
New York, NY :
Springer US
2005.
Cham : Springer Nature |
| Online Zugang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Anmerkung: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • High-Linearity CMOS RF Front-End Circuits, Texte imprimé, 9780387238012 • High-Linearity CMOS RF Front-End Circuits, Texte imprimé, 9780387503790 • High-Linearity CMOS RF Front-End Circuits, Texte imprimé, 9781441936639 |
Inhaltsangabe:
- RF Devices in CMOS Process
- Linear Transconductors in CMOS
- Linearization with Harmonic Cancellation
- LNA Design in CMOS
- Down-Conversion Mixer Design in CMOS
- Power Amplifier Design in CMOS
- Conclusions.