Helium Ion Microscopy : Principles and Applications
Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions such as the Helium Ion Microscope (HIM) are destined to become the imaging tools of choice for the 21st century. Topics covered include th...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | Livre numérique |
| اللغة: | Anglais |
| منشور في: |
New York, NY :
Springer New York
2013.
Cham : Springer Nature |
| سلاسل: | SpringerBriefs in Materials
|
| الوصول للمادة أونلاين: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| ملاحظة: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Helium ion microscopy, principles and applications, David C. Joy, New York, Springer, 2013, 1 vol. (viii-64 p.), SpringerBriefs in materials, 978-1-461-48659-6 • Helium Ion Microscopy, Texte imprimé, 9781461486619 |
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|---|---|---|---|
| 001 | 946877 | ||
| 008 | 131018s2013 xx ||| |||| 00| 0 eng d | ||
| 009 | PPN172421276 | ||
| 020 | |a 9781461486602 | ||
| 020 | |a 9781461486602 | ||
| 041 | 0 | |a eng | |
| 082 | |a 620.11 | ||
| 100 | 1 | |a Joy, David C. | |
| 245 | 1 | 0 | |a Helium Ion Microscopy : |b Principles and Applications |c by David C. Joy. |
| 260 | |a New York, NY : |b Springer New York. | ||
| 260 | |a Cham : |b Springer Nature, |c 2013. | ||
| 490 | 0 | |a SpringerBriefs in Materials |x 2192-1105 | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Chapter 1: Introduction to Helium Ion Microscopy -- Chapter 2: Microscopy with Ions - A brief history -- Chapter 3: Operating the Helium Ion Microscope -- Chapter 4: Ion Solid Interactions and Image Formation -- Chapter 5: Charging and Damage -- Chapter 6: Microanalysis with the HIM -- Chapter 7: Ion Generated Damage -- Chapter 8: Working with other Ion beams -- Chapter 9: Patterning and Nanofabrication -- Conclusion -- Bibliography -- Appendix: iSE Yields, and IONiSE parameters for He+ excitation of Elements and Compounds -- Index. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Helium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions such as the Helium Ion Microscope (HIM) are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined. Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy Compares ion and electron beams as options for microscopy Presents a detailed physical model of ion-solid interactions and signal generation Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy. | ||
| 776 | 0 | |0 18507250X |t Helium ion microscopy |o principles and applications |f David C. Joy |c New York |n Springer |d 2013 |p 1 vol. (viii-64 p.) |s SpringerBriefs in materials |z 978-1-461-48659-6 | |
| 776 | 0 | |t Helium Ion Microscopy |b Texte imprimé |z 9781461486619 | |
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