Spintronics : from materials to devices
Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and...
Enregistré dans:
| Andre forfattere: | , |
|---|---|
| Format: | Livre numérique |
| Sprog: | Anglais |
| Udgivet: |
Dordrecht :
Springer Netherlands
[20..].
Cham : Springer Nature |
| Udgivelse: | 1st ed. 2013. |
| Online adgang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Kommentar: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Spintronics, Texte imprimé, 9789048138319 |
Indholdsfortegnelse:
- Heusler compounds at a glance New Heusler compounds and their properties Crystal structure of Heusler compounds Substitution effects in double Perovskites: How the crystal structure influences the electronic properties Half-metallic ferromagnets Correlation and chemical disorder in Heusler compounds: a spectroscopical study Theory of the half-metallic Heusler compounds Electronic structure of complex oxides Local structure of highly spin polarized Heusler compounds revealed by nuclear magnetic resonance spectroscopy New materials with high spin polarization investigated by X-ray magnetic circular dichroism Hard X-ray photoelectron spectroscopy of new materials for spintronics Characterization of the surface electronic properties of Co2Cr1 xFexAl Magneto-optical investigations and ion beam-induced modification of Heusler compounds Co2Fe(Al1 xSix) Heusler alloys and their applications to spintronics Transport properties of Co2(Mn,Fe)Si thin films Preparation and investigation of interfaces of Co2Cr1 xFexAl thin films Tunnel magnetoresistance effect in tunnel junctions with Co2MnSi Heusler alloy electrode and MgO barrier