Festkörperprobleme 29 : Plenary Lectures of the Divisions Semiconductor Physics Thin Films Dynamics and Statistical Physics Magnetism Metal Physics Surface Physics Low Temperature Physics of the German Physical Society (DPG), Münster, April 3 to 7, 1989
שמור ב:
| מחברים אחרים: | |
|---|---|
| פורמט: | Livre numérique |
| שפה: | Allemand |
| יצא לאור: |
Berlin [etc.] :
Springer
[20..].
Cham : Springer Nature |
| סדרה: | Advances in solid state physics
29 |
| נושאים: | |
| גישה מקוונת: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| הערה: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Advances in solid state physics 29, Plenary lectures of the divisions: Semiconductor Physics, Thin Films, Dynamics and Statistical Physics, Magnetism, Metal Physics, Surface Physics, Low Temperature Physics, of the German Physical Society (DPG), Münster, April 3 to 7, 1989, edited by Ulrich Rössler, Lengerich, Vieweg, 1989, 1 vol. (VII-345 p.), Festkörper probleme, 3-528-08035-3 • Festkörperprobleme, Texte imprimé, 9783662160688 |
תוכן הענינים:
- Charge transfer between weakly coupled normal metals and superconductors at low temperatures
- Quantum effects and the onset of superconductivity in granular films
- Pattern formation in a liquid crystal
- X-ray absorption and reflection in materials sciences
- Propagation of large-wavevector acoustic phonons new perspectives from phonon imaging
- Theory of dynamical surface states and reconstructions at crystal surfaces
- Scanning tunneling microscopy and spectroscopy on clean and metal-covered Si surfaces
- Optical dephasing and orientational relaxation of wannier-excitons and free carriers in GaAs and GaAs/AlxGa1?xAs quantum wells
- The spectroscopic evidence for the identity of EL2 and the AsGa antisite in As-grown GaAs
- On the charge state of the EL2 mid gap level semi-insulating GaAs from a quantitative analysis of the compensation
- Deep donor levels (DX centers) in III V semiconductors: Recent experimental results
- Chemical binding, stability and metastability of defects in semiconductors
- A new look at the reliability of thin film metallizations for microelectronic devices
- Quantum dot resonant tunneling spectroscopy
- DC and far infrared experiments on deep mesa etched single and multi-layered quantum wires
- Coherent electron focusing
- The size-induced metal-insulator transition and related electron interference phenomena in modern microelectronics.