Compact Modeling : Principles, Techniques and Applications
Compact Models of circuit elements are models that are sufficiently simple to be incorporated in circuit simulators and are sufficiently accurate to make the outcome of the simulators useful to circuit designers. The conflicting objectives of model simplicity and accuracy make the compact modeling f...
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| Autor principal: | |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado em: |
Dordrecht :
Springer Netherlands : Imprint: Springer
[20..].
Cham : Springer Nature |
| Edição: | 1st ed. 2010. |
| Acesso em linha: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Compact Modeling, Texte imprimé, 9789048186136 |
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| 100 | 1 | |a Gildenblat, Gennady Sh. | |
| 245 | 1 | 0 | |a Compact Modeling : |b Principles, Techniques and Applications |c edited by Gennady Gildenblat. |
| 250 | |a 1st ed. 2010. | ||
| 260 | |a Dordrecht : |b Springer Netherlands : |b Imprint: Springer. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Compact Models of MOS Transistors Surface-Potential-Based Compact Model of Bulk MOSFET PSP-SOI: A Surface-Potential-Based Compact Model of SOI MOSFETs Benchmark Tests for MOSFET Compact Models High-Voltage MOSFET Modeling Physics of Noise Performance of Nanoscale Bulk MOS Transistors Compact Models of Bipolar Junction Transistors to Bipolar Transistor Modeling Mextram The HiCuM Bipolar Transistor Model Compact Models of Passive Devices Integrated Resistor Modeling The JUNCAP2 Model for Junction Diodes Surface-Potential-Based MOS Varactor Model Modeling of On-chip RF Passive Components Modeling of Multiple Gate MOSFETs Multi-Gate MOSFET Compact Model BSIM-MG Compact Modeling of Double-Gate and Nanowire MOSFETs Statistical Modeling Modeling of MOS Matching Statistical Modeling Using Backward Propagation of Variance (BPV) | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Compact Models of circuit elements are models that are sufficiently simple to be incorporated in circuit simulators and are sufficiently accurate to make the outcome of the simulators useful to circuit designers. The conflicting objectives of model simplicity and accuracy make the compact modeling field an exciting and challenging research area for device physicists, modeling engineers and circuit designers. The models of MOS transistors underwent revolutionary change in the last few years and are now based on new principles. The recent models of diodes, passive elements, noise sources and bipolar transistors were developed along the more traditional lines. Following this evolutionary development they became highly sophisticated and much more capable to reflect the increased demands of the advanced integrated circuit technology. The latter depends on the compact models for the shortening of the design cycle and eliminating the elements of overdesign which is often undesirable in today s competitive environment. At the same time, statistical modeling of semiconductor devices received new significance following the dramatic reduction of the device dimensions and of the power supply voltage. Finally, despite the complexity of the fabrication process, the multi-gate MOS transistors are now seriously considered for the purpose of controlling the small geometry effects. Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models. Compact Modeling also includes chapters on the MOSFET noise theory, benchmarking of MOSFET compact models, modeling of the power MOSFET, and an overview of the bipolar modeling field. It concludes with two chapters describing the variability modeling including some recent developments in the field | ||
| 700 | 1 | |a Gildenblat, Gennady Sh. |4 edt | |
| 776 | 0 | |t Compact Modeling |b Texte imprimé |z 9789048186136 | |
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| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-KFM0HBC4-X |z Accès sur la plateforme Istex | |
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