Device physics of narrow gap semiconductors
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative...
Gorde:
| Egile Nagusiak: | , |
|---|---|
| Formatua: | Livre numérique |
| Hizkuntza: | Anglais |
| Argitaratua: |
New York, NY :
Springer New York
[20..].
Cham : Springer Nature |
| Edizioa: | 1. |
| Saila: | Microdevices, Physics and Fabrication Technologies
|
| Sarrera elektronikoa: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Oharra: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Device physics of narrow gap semiconductors, Junhao Chu, Arden Sher, New York, Springer, 2010, 1 vol. (XIII-506 p.), Microdevices, 978-1-441-91039-4 |
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| 100 | 1 | |a Chu, Junhao. | |
| 245 | 1 | 0 | |a Device physics of narrow gap semiconductors |c by Junhao Chu, Arden Sher. |
| 250 | |a 1. | ||
| 260 | |a New York, NY : |b Springer New York. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 490 | 0 | |a Microdevices, Physics and Fabrication Technologies | |
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a Impurities and Defects Recombination Two-Dimensional Surface Electron Gas Superlattice and Quantum Well Devices Physics | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors | ||
| 700 | 1 | |a Sher, Arden. |4 aut | |
| 776 | 0 | |0 147902592 |t Device physics of narrow gap semiconductors |f Junhao Chu, Arden Sher |c New York |n Springer |d 2010 |p 1 vol. (XIII-506 p.) |s Microdevices |z 978-1-441-91039-4 | |
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