Rare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
This book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoe...
Tallennettuna:
| Päätekijä: | |
|---|---|
| Muut tekijät: | |
| Aineistotyyppi: | Livre numérique |
| Kieli: | Anglais |
| Julkaistu: |
Dordrecht :
Springer Netherlands
[20..].
Cham : Springer Nature |
| Painos: | 1st ed. 2010. |
| Sarja: | Topics in Applied Physics
124 |
| Aiheet: | |
| Linkit: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Huomautus: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Rare earth doped III-nitrides for optoelectronic and spintronic applications, Kevin O'Donnell, Volkmar Dierolf, editors, Dordrecht, Springer, 2010, 1 vol. (XVI-355 p.), Topics in applied physics, 978-90-481-2876-1 • Rare earth doped III-nitrides for optoelectronic and spintronic applications, Kevin O'Donnell, Volkmar Dierolf, editors, Dordrecht, Springer, 2010, 1 vol. (XVI-355 p.), Topics in applied physics, 978-90-481-2876-1 • Rare earth doped III-nitrides for optoelectronic and spintronic applications, Kevin O'Donnell, Volkmar Dierolf, editors, Dordrecht, Springer, 2010, 1 vol. (XVI-355 p.), Topics in applied physics, 978-90-481-2876-1 • Rare earth doped III-nitrides for optoelectronic and spintronic applications, Kevin O'Donnell, Volkmar Dierolf, editors, Dordrecht, Springer, 2010, 1 vol. (XVI-355 p.), Topics in applied physics, 978-90-481-2876-1 • Rare earth doped III-nitrides for optoelectronic and spintronic applications, Kevin O'Donnell, Volkmar Dierolf, editors, Dordrecht, Springer, 2010, 1 vol. (XVI-355 p.), Topics in applied physics, 978-90-481-2876-1 |
Sisällysluettelo:
- Theoretical Modelling of Rare Earth Dopants in GaN RE Implantation and Annealing of III-Nitrides Lattice Location of RE Impurities in IIINitrides Electroluminescent Devices Using RE-Doped III-Nitrides Er-Doped GaN and InxGa1-xN for Optical Communications Rare-Earth-Doped GaN Quantum Dot Visible Luminescent RE-doped GaN, AlGaN and AlInN Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride Excitation Mechanisms of RE Ions in Semiconductors High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd Summary and Prospects for Future Work