Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...
Uloženo v:
| Hlavní autor: | |
|---|---|
| Médium: | Livre numérique |
| Jazyk: | Anglais |
| Vydáno: |
Dordrecht :
Springer Netherlands
2010.
Cham : Springer Nature |
| Edice: | Springer Series in Advanced Microelectronics
28 |
| On-line přístup: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Poznámka: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies, Texte imprimé, 9789048132867 • Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies, Texte imprimé, 9789400730830 • Variation aware analog and mixed-signal circuit design in emerging multi-gate CMOS technologies, Michael Fulde, Dordrecht, Springer, 2010, 1 vol. (X-127 p.), Springer series in advanced microelectronics, 978-90-481-3279-9 |
Obsah:
- Analog Properties of Multi-Gate MOSFETs
- High-k Related Design Issues
- Multi-Gate Related Design Aspects
- Multi-Gate Tunneling FETs
- Conclusions and Outlook.