Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies

Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of convention...

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מחבר ראשי: Fulde, Michael
פורמט: Livre numérique
שפה:Anglais
יצא לאור: Dordrecht : Springer Netherlands 2010.
Cham : Springer Nature
סדרה:Springer Series in Advanced Microelectronics 28
גישה מקוונת:Accès sur la plateforme de l'éditeur
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Edition sous un autre format:• Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies, Texte imprimé, 9789048132867
• Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies, Texte imprimé, 9789400730830
• Variation aware analog and mixed-signal circuit design in emerging multi-gate CMOS technologies, Michael Fulde, Dordrecht, Springer, 2010, 1 vol. (X-127 p.), Springer series in advanced microelectronics, 978-90-481-3279-9
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505 0 |a Analog Properties of Multi-Gate MOSFETs -- High-k Related Design Issues -- Multi-Gate Related Design Aspects -- Multi-Gate Tunneling FETs -- Conclusions and Outlook. 
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520 |a Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption. 
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