Fundamentals of Power Semiconductor Devices
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatme...
Gardado en:
| Autor Principal: | |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado: |
New York, NY :
Springer US
2008.
Cham : Springer Nature |
| Sujets: | |
| Acceso en liña: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Fundamentals of Power Semiconductor Devices, Texte imprimé, 9781489977656 • Chromatography, volume editor, George T. Tsao, Berlin, Springer-Verlag, 1993, vi, 174 p., Advances in biochemical engineering/biotechnology, 3-540-56440-3 • Fundamentals of power semiconductor devices, B. Jayant Baliga, New York, Springer, 2008, 1 vol. (XXIII-1069 p.), 978-0-387-47313-0 |
Table des matières:
- Material Properties and Transport Physics
- Breakdown Voltage
- Schottky Rectifiers
- P-i-N Rectifiers
- Power MOSFETs
- Bipolar Junction Transistors
- Thyristors
- Thyristors
- Synopsis.