Fundamentals of Power Semiconductor Devices
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatme...
Shranjeno v:
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| Format: | Livre numérique |
| Jezik: | Anglais |
| Izdano: |
New York, NY :
Springer US
2008.
Cham : Springer Nature |
| Teme: | |
| Online dostop: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Sporočilo: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Fundamentals of Power Semiconductor Devices, Texte imprimé, 9781489977656 • Chromatography, volume editor, George T. Tsao, Berlin, Springer-Verlag, 1993, vi, 174 p., Advances in biochemical engineering/biotechnology, 3-540-56440-3 • Fundamentals of power semiconductor devices, B. Jayant Baliga, New York, Springer, 2008, 1 vol. (XXIII-1069 p.), 978-0-387-47313-0 |
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| 100 | 1 | |a Baliga, B. Jayant, |d 1948- | |
| 245 | 1 | 0 | |a Fundamentals of Power Semiconductor Devices |c by B. Jayant Baliga. |
| 260 | |a New York, NY : |b Springer US. | ||
| 260 | |a Cham : |b Springer Nature, |c 2008. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Material Properties and Transport Physics -- Breakdown Voltage -- Schottky Rectifiers -- P-i-N Rectifiers -- Power MOSFETs -- Bipolar Junction Transistors -- Thyristors -- Thyristors -- Synopsis. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses: Numerical simulation examples to elucidate the operating physics and validate the models Device performance attributes that allow practicing engineers in the industry to develop products Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures. | ||
| 650 | |a Semiconducteurs de puissance | ||
| 650 | |a Transistors MOSFET | ||
| 650 | |a Thyristors | ||
| 776 | 0 | |t Fundamentals of Power Semiconductor Devices |b Texte imprimé |z 9781489977656 | |
| 776 | 0 | |0 020366329 |t Chromatography |f volume editor, George T. Tsao |c Berlin |n Springer-Verlag |d 1993 |p vi, 174 p. |s Advances in biochemical engineering/biotechnology |z 3-540-56440-3 | |
| 776 | 0 | |0 130681911 |t Fundamentals of power semiconductor devices |f B. Jayant Baliga |c New York |n Springer |d 2008 |p 1 vol. (XXIII-1069 p.) |z 978-0-387-47313-0 | |
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