Mathematical and numerical modelling of heterostructure semiconductor devices : from theory to programming
The commercial development of novel semiconductor devices requires that their properties be examined as thoroughly and rapidly as possible. These properties are investigated by obtaining numerical solutions of the highly nonlinear coupled set of equations which govern their behaviour. In particular,...
Bewaard in:
| Hoofdauteur: | |
|---|---|
| Formaat: | Livre numérique |
| Taal: | Anglais |
| Gepubliceerd in: |
London :
Springer London
2009.
Cham : Springer Nature |
| Online toegang: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Opmerking: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Mathematical and numerical modelling of heterostructure semiconductor devices, from theory to programming, E.A.B. Cole, London, Springer, 2009, 1 vol. (XV-406 p.), 978-1-8488-2936-7 • Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming, Texte imprimé, 9781848829435 |
Inhoudsopgave:
- Overview and physical equations
- Overview of device modelling
- Quantum mechanics
- Equilibrium thermodynamics and statistical mechanics
- Density of states and applications 1
- Density of states and applications 2
- The transport equations and the device equations
- Mathematical and numerical methods
- Basic approximation and numerical methods
- Fermi and associated integrals
- The upwinding method
- Solution of equations: the Newton and reduced method
- Solution of equations: the phaseplane method
- Solution of equations: the multigrid method
- Approximate and numerical solutions of the Schrödinger equation
- Genetic algorithms and simulated annealing
- Grid generation.