Fundamentals of Solid State Engineering
Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics su...
Guardado en:
| Autor principal: | |
|---|---|
| Formato: | Livre numérique |
| Lenguaje: | Anglais |
| Publicado: |
New York, NY :
Springer US
2009.
Cham : Springer Nature |
| Acceso en línea: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Fundamentals of Solid State Engineering, Texte imprimé, 9781441947123 • Fundamentals of Solid State Engineering, Texte imprimé, 9780387921693 • Fundamentals of solid state engineering, Manijeh Razeghi, 3rd edition, [New york], Springer, 2009, 1 vol. (XXVII-757 p.), 978-0-387-92167-9 |
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| 100 | 1 | |a Razeghi, Manijeh, |d 19..- | |
| 245 | 1 | 0 | |a Fundamentals of Solid State Engineering |c by Manijeh Razeghi. |
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| 260 | |a Cham : |b Springer Nature, |c 2009. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Crystalline Properties of Solids -- Electronic Structure of Atoms -- to Quantum Mechanics -- Electrons and Energy Band Structures in Crystals -- Phonons -- Thermal Properties of Crystals -- Equilibrium Charge Carrier Statistics in Semiconductors -- Non-Equilibrium Electrical Properties of Semiconductors -- Semiconductor p-n and Metal-Semiconductor Junctions -- Optical Properties of Semiconductors -- Electron-Electron Interactions: Screening -- Semiconductor Heterostructures and Low-Dimensional Quantum Structures -- Quantum Transport -- Electron Phonon Interactions -- Compound Semiconductors and Crystal Growth Tec -- Semiconductor Characterization Techniques -- Defects. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary introduction to solid state engineering, combining concepts from physics, chemistry, electrical engineering, materials science and mechanical engineering. Revised throughout, this third edition includes new topics such as electron-electron and electron-phonon interactions, in addition to the Kane effective mass method. A chapter devoted to quantum mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen atom, the quantum mechanical description of angular momentum and the origin of spin. This textbook also features an improved transport theory description, which now goes beyond Drude theory, discussing the Boltzmann approach. Introducing students to the rigorous quantum mechanical way of thinking about and formulating transport processes, this textbook presents the basic physics concepts and thorough treatment of semiconductor characterization technology, designed for solid state engineers. | ||
| 776 | 0 | |t Fundamentals of Solid State Engineering |b Texte imprimé |z 9781441947123 | |
| 776 | 0 | |t Fundamentals of Solid State Engineering |b Texte imprimé |z 9780387921693 | |
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