Static compression of energetic materials

Developing and testing novel energetic materials is an expanding branch of the materials sciences. Reaction, detonation or explosion of such materials invariably produce extremely high pressures and temperatures. To study the equations-of-state (EOS) of energetic materials in extreme regimes both sh...

Mô tả đầy đủ

Đã lưu trong:
Chi tiết về thư mục
Tác giả chính: Peiris, Suhithi M.
Tác giả khác: Piermarini, Gasper J. (Giám đốc xuất bản)
Định dạng: Livre numérique
Ngôn ngữ:Anglais
Được phát hành: Berlin, Heidelberg : Springer Berlin Heidelberg [20..].
Cham : Springer Nature
Phiên bản:1st ed. 2008.
Loạt:Shock Wave and High Pressure Phenomena
Những chủ đề:
Truy cập trực tuyến:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Chú thích: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Static Compression of Energetic Materials, Texte imprimé, 9783540863854
• Static Compression of Energetic Materials, Texte imprimé, 9783642087844
• Static compression of energetic materials, Suhithi M. Peiris, Gasper J. Piermarini (eds.), 2008, Berlin, Springer, 1 vol. (XII-330 p.), Shock wave and high pressure phenomena, 978-3-540-68146-5
Mục lục:
  • Diamond Anvil Cell Techniques Synthesis of High-Nitrogen Energetic Material Equations of State and High-Pressure Phases of Explosives Equations of State of Binders and Related Polymers Reaction Kinetics Understanding Shock-Induced Changes in Molecular Crystals Equilibrium Molecular Dynamics Simulations Modeling Defect-Induced Phenomena.
  • 1. Diamond anvil cell [DAC] techniques
  • 2. Synthesis of high-nitrogen energetic material
  • 3. Equations of state and high-pressure phases of explosives
  • 4. Equations of state of binders and related polymers
  • 5. Reaction kinetics
  • 6. Understanding shock-induced changes in molecular crystals
  • 7. Equilibrium molecular dynamic simulations
  • 8. Modeling defect-induced phenomena.