Dilute III-V Nitride Semiconductors and Material Systems : Physics and Technology
A major current challenge for semiconductor devices is to develop materials for the next generation of optical communication systems and solar power conversion applications. Recently, extensive research has revealed that an introduction of only a few percentages of nitrogen into III-V semiconductor...
Enregistré dans:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Livre numérique |
| 語言: | Anglais |
| 出版: |
Berlin, Heidelberg :
Springer Berlin Heidelberg
2008.
Cham : Springer Nature |
| 叢編: | Springer Series in Materials Science
105 |
| 在線閱讀: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| 提示: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Dilute III-V Nitride Semiconductors and Material Systems, Texte imprimé, 9783540842996 • Dilute III-V Nitride Semiconductors and Material Systems, Texte imprimé, 9783642093937 • Dilute III-V nitride semiconductors and material systems, physics and technology, Ay—se Erol Editor, Berlin, Springer, 2008, 1 vol. (XXXII- 590 p.), Springer series in materials science, 978-3-540-74528-0 |
書本目錄:
- Energetic Beam Synthesis of Dilute Nitrides and Related Alloys
- Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (100) and (111)B Quantum Wells
- Electronic Band Structure of Highly Mismatched Semiconductor Alloys
- Electronic Structure of GaNxAs1?x Under Pressure
- Experimental Studies of GaInNAs Conduction Band Structure
- Electromodulation Spectroscopy of GaInNAsSb/GaAs Quantum Wells: The Conduction Band Offset and the Electron Effective Mass Issues
- The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides
- Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells
- Assessing the Preferential Chemical Bonding of Nitrogen in Novel Dilute III As N Alloys
- The Hall Mobility in Dilute Nitrides
- Spin Dynamics in Dilute Nitride
- Optical and Electronic Properties of GaInNP Alloys: A New Material for Lattice Matching to GaAs
- Properties and Laser Applications of the GaP-Based (GaNAsP)-Material System for Integration to Si Substrates
- Comparison of the Electronic Band Formation and Band Structure of GaNAs and GaNP
- Doping, Electrical Properties and Solar Cell Application of GaInNAs
- Elemental Devices and Circuits for Monolithic Optoelectronic-Integrated Circuit Fabricated in Dislocation-Free Si/III V-N Alloy Layers Grown on Si Substrate
- Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers
- Dilute Nitride Quantum Well Lasers by Metalorganic Chemical Vapor Deposition
- Interdiffused GaInNAsSb Quantum Well on GaAs for 1,300 1,550 nm Diode Lasers
- Vertical Cavity Semiconductor Optical Amplifiers Based on Dilute Nitrides
- Dilute Nitride Photodetector and Modulator Devices.