Ion implantation and synthesis of materials
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant...
محفوظ في:
| المؤلفون الرئيسيون: | , |
|---|---|
| التنسيق: | Livre numérique |
| اللغة: | Anglais |
| منشور في: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Springer e-books
[20..].
Cham : Springer Nature |
| الوصول للمادة أونلاين: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| ملاحظة: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ion implantation and synthesis of materials, Michael Nastasi, J. W. Mayer, New York, Springer, 2006, 1 vol. (XIII-263 p.), 3-540-23674-0 |
جدول المحتويات:
- General Features and Fundamental Concepts Particle Interactions Dynamics of Binary Elastic Collisions Cross-Section Ion Stopping Ion Range and Range Distribution Displacements and Radiation Damage Channeling Doping, Diffusion and Defects in Ion-Implanted Si Crystallization and Regrowth of Amorphous Si Si Slicing and Layer Transfer: Ion-Cut Surface Erosion During Implantation: Sputtering Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing Application of Ion Implantation Techniques in CMOS Fabrication Ion implantation in CMOS Technology: Machine Challenges