Ion implantation and synthesis of materials
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implant...
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| Auteurs principaux: | , |
|---|---|
| Formato: | Livre numérique |
| Idioma: | Anglais |
| Publicado em: |
Berlin, Heidelberg :
Springer Berlin Heidelberg : Springer e-books
[20..].
Cham : Springer Nature |
| Acesso em linha: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Nota: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Ion implantation and synthesis of materials, Michael Nastasi, J. W. Mayer, New York, Springer, 2006, 1 vol. (XIII-263 p.), 3-540-23674-0 |
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| 100 | 1 | |a Nastasi, Michael Anthony, |d 1950-...., |c physicien. | |
| 245 | 1 | 0 | |a Ion implantation and synthesis of materials |c by Michael Nastasi, James W. Mayer. |
| 260 | |a Berlin, Heidelberg : |b Springer Berlin Heidelberg : |b Springer e-books. | ||
| 260 | |a Cham : |b Springer Nature, |c [20..]. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 1 | |a General Features and Fundamental Concepts Particle Interactions Dynamics of Binary Elastic Collisions Cross-Section Ion Stopping Ion Range and Range Distribution Displacements and Radiation Damage Channeling Doping, Diffusion and Defects in Ion-Implanted Si Crystallization and Regrowth of Amorphous Si Si Slicing and Layer Transfer: Ion-Cut Surface Erosion During Implantation: Sputtering Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing Application of Ion Implantation Techniques in CMOS Fabrication Ion implantation in CMOS Technology: Machine Challenges | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. https://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described | ||
| 700 | 1 | |a Mayer, James W., |d 1930- |4 aut | |
| 776 | 0 | |0 108854817 |t Ion implantation and synthesis of materials |f Michael Nastasi, J. W. Mayer |c New York |n Springer |d 2006 |p 1 vol. (XIII-263 p.) |z 3-540-23674-0 | |
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| 997 | |0 938269 |1 Livre numérique |a Ressource numérique |b INSA |b ENSA |c 0/Bibliothèque numérique/ |c 1/Bibliothèque numérique/Autre ressource numérique/ | ||