Ultra-low voltage nano-scale memories

Ultra-Low Voltage Nano-Scale Memories provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable...

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Hlavní autor: Itoh, Kiyoo (Šéfredaktor, odpovědný redaktor)
Další autoři: Horiguchi, Masashi (Šéfredaktor, odpovědný redaktor), Tanaka, Hitoshi (Šéfredaktor, odpovědný redaktor)
Médium: Livre numérique
Jazyk:Anglais
Vydáno: New York, NY : Springer US 2007.
Cham : Springer Nature
Edice:Integrated Circuits and Systems
On-line přístup:Accès sur la plateforme de l'éditeur
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Accès INSA CVL
Poznámka: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Ultra-Low Voltage Nano-Scale Memories, Texte imprimé, 9781441941244
• Ultra-Low Voltage Nano-Scale Memories, Texte imprimé, 9780387333984
• Ultra-Low Voltage Nano-Scale Memories, Texte imprimé, 9780387513232
Obsah:
  • An Introduction to LSI Design
  • Ultra-Low Voltage Nano-Scale DRAM Cells
  • Ultra-Low Voltage Nano-Scale SRAM Cells
  • Leakage Reduction for Logic Circuits in RAMs
  • Variability Issue in the Nanometer Era
  • Reference Voltage Generators
  • Voltage Down-Converters
  • Voltage Up-Converters and Negative Voltage Generators
  • High-Voltage Tolerant Circuits.