Nanoscale Transistors : Device Physics, Modeling and Simulation

NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were va...

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Bibliografski detalji
Glavni autori: Lundstrom, Mark S., Guo, Jing (Autor)
Format: Livre numérique
Jezik:Anglais
Izdano: New York, NY : Springer US 2006.
Cham : Springer Nature
Online pristup:Accès sur la plateforme de l'éditeur
Accès sur la plateforme Istex
Accès Université d'Orléans
Accès INSA CVL
Bilješka: Archives Springer e-books (Licence nationale)
Archives Springer e-books (Licence nationale)
Autres localisations: Voir dans le Sudoc
Edition sous un autre format:• Nanoscale Transistors, Texte imprimé, 9780387280028
• Nanoscale Transistors, Texte imprimé, 9780387508665
• Nanoscale Transistors, Texte imprimé, 9781441939159
Sadržaj:
  • Basic Concepts
  • Devices, Circuits, and Systems
  • The Ballistic Nanotransistor
  • Scattering Theory of the MOSFET
  • Nanowire Field-Effect Transistors
  • Transistors at the Molecular Scale.