Nanoscale Transistors : Device Physics, Modeling and Simulation
NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were va...
Kaydedildi:
| Asıl Yazarlar: | , |
|---|---|
| Materyal Türü: | Livre numérique |
| Dil: | Anglais |
| Baskı/Yayın Bilgisi: |
New York, NY :
Springer US
2006.
Cham : Springer Nature |
| Online Erişim: | Accès sur la plateforme de l'éditeur Accès sur la plateforme Istex Accès Université d'Orléans Accès INSA CVL |
| Not: |
Archives Springer e-books (Licence nationale) Archives Springer e-books (Licence nationale) |
| Autres localisations: | Voir dans le Sudoc |
| Edition sous un autre format: | • Nanoscale Transistors, Texte imprimé, 9780387280028 • Nanoscale Transistors, Texte imprimé, 9780387508665 • Nanoscale Transistors, Texte imprimé, 9781441939159 |
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| 100 | 1 | |a Lundstrom, Mark S. | |
| 245 | 1 | 0 | |a Nanoscale Transistors : |b Device Physics, Modeling and Simulation |c by Mark S. Lundstrom, Jing Guo. |
| 260 | |a New York, NY : |b Springer US. | ||
| 260 | |a Cham : |b Springer Nature, |c 2006. | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 500 | |a Archives Springer e-books (Licence nationale) | ||
| 505 | 0 | |a Basic Concepts -- Devices, Circuits, and Systems -- The Ballistic Nanotransistor -- Scattering Theory of the MOSFET -- Nanowire Field-Effect Transistors -- Transistors at the Molecular Scale. | |
| 506 | |a Accès en ligne pour les établissements français bénéficiaires des licences nationales | ||
| 506 | |a Accès soumis à abonnement pour tout autre établissement | ||
| 506 | |a Conditions particulières de réutilisation pour les bénéficiaires des licences nationales. chttps://www.licencesnationales.fr/springer-nature-ebooks-contrat-licence-ln-2017 | ||
| 520 | |a NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules. The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices. | ||
| 700 | 1 | |a Guo, Jing. |4 aut | |
| 776 | 0 | |t Nanoscale Transistors |b Texte imprimé |z 9780387280028 | |
| 776 | 0 | |t Nanoscale Transistors |b Texte imprimé |z 9780387508665 | |
| 776 | 0 | |t Nanoscale Transistors |b Texte imprimé |z 9781441939159 | |
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| 856 | 4 | |u https://revue-sommaire.istex.fr/ark:/67375/8Q1-L8JVNW7V-P |z Accès sur la plateforme Istex | |
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