Electrons and holes in semiconductors : with applications to transistor electronics

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Dettagli Bibliografici
Autore principale: Shockley, William Bradford, 1910-1989
Natura: Livre papier
Lingua:Anglais
Pubblicazione: Toronto ; New York ; London : D. Van Nostrand Company, Inc. 1950.
Serie:The Bell Telephone Laboratories series
Soggetti:
Nota: Autres tirages : 1951, 1953, 1954, 1955, 1956, 1959, 1963, 1966
1 photo en frontispice : "Experimental techniques of transistor electronics"
Autres localisations: Voir dans le Sudoc
Sommario:
  • Part I. Introduction to transistor electronics
  • Chapter 1. The Bulk properties of semiconductors
  • Chapter 2. The transistor as a circuit element
  • Chapter 3. Quantitative studies of injection of holes and electrons
  • Chapter 4. On the physical theory of transistors
  • Part II. Descriptive theory of semiconductors
  • Chapter 5. Quantum states, energy bands, and Brillouin zones
  • Chapter 6. Velocities and currents for electrons in crystals
  • Chapter 7. Electrons and holes in electric and magnetic fields
  • Chapter 8. Introductory theory of conductivity and hall effect
  • Chapter 9. Distributions of quantum states in energy
  • Chapter 10. Fermi-Dirac statistics for semiconductors
  • Chapter 11. Mathematical theory of conductivity and hall effect
  • Chapter 12. Applications to transistor electronics
  • Part III. QUantum-mechanical foundations
  • Chapter 13. Introduction to Part III
  • Chapter 14. Elementary quantum mechanics with circuit theory analogues
  • Chapter 15. Theory of electron and hole velocities, currents and accelerations
  • Chapter 16. Statistical mechanics for semiconductors
  • Chapter 17. The theory of transition probabilities for holes and electrons